Everspin Technologies, Inc. is engaged in providing magneto resistive random-access memory (MRAM) solutions. The Company's MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM products include industry standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI (QSPI) interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.
企業コードMRAM
会社名Everspin Technologies Inc
上場日Oct 07, 2016
最高経営責任者「CEO」Dr. Sanjeev Aggarwal, Ph.D.
従業員数86
証券種類Ordinary Share
決算期末Oct 07
本社所在地5670 W. Chandler Boulevard
都市CHANDLER
証券取引所NASDAQ Global Market Consolidated
国United States of America
郵便番号85226
電話番号14803471111
ウェブサイトhttps://www.everspin.com/
企業コードMRAM
上場日Oct 07, 2016
最高経営責任者「CEO」Dr. Sanjeev Aggarwal, Ph.D.
過去5年間の配当金総支払額は
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