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Everspin Technologies Inc

MRAM
查看詳細走勢圖
8.140USD
-0.900-9.96%
收盤 03/30, 16:00美東報價延遲15分鐘
101.69M總市值
虧損本益比TTM

Everspin Technologies Inc

8.140
-0.900-9.96%
盤中分時
1分
30分
1小時
日k
週k
月k
日k

今天

-9.96%

5天

-6.97%

1月

-28.53%

6月

-10.45%

今年開始到現在

-12.28%

1年

+60.24%

查看詳細走勢圖

TradingKey Everspin Technologies Inc股票評分

單位: USD 更新時間: 2026-03-27

操作建議

Everspin Technologies Inc當前公司基本面數據相對非常健康,最新ESG揭露屬於行業中等水平。增長潛力很大。當前估值合理,在半導體與設備行業排名55/106位。機構持股佔比非常高,近一月多位分析師給出公司評級為買入。最高目標價為12.50。中期看,股價處於平穩狀態。近一個月,市場表現非常差,但公司基本面和技術面得分較高。目前股價在壓力位和支撐位之間,可以做區間波段操作。

Everspin Technologies Inc評分

相關信息

行業排名
55 / 106
全市場排名
192 / 4542
所屬行業
半導體與設備

壓力支撐

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Everspin Technologies Inc亮點

亮點風險
Everspin Technologies, Inc. is a developer and manufacturer of magnetoresistive random access memory (MRAM) solutions. Its MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM offers products with industry-standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.
業績增長期
公司處於發展階段,最新年度總收入55.20M美元
業績轉虧
公司業績轉虧,最新年度虧損美元
估值合理
公司最新PB估值2.94,處於3年歷史合理位
機構減倉
最新機構持股13.76M股,環比減少16.44%
景順投資公司持倉
明星投資者景順投資公司持倉,最新持倉8.25K股
活躍度降低
近期活躍度降低,過去20天平均換手率-0.42

分析師目標

基於 2 分析師
買入
評級
12.500
目標均價
+38.27%
漲幅空間
數據免責聲明:分析師評級與目標價由LSEG提供,僅供參考,不應當作投資建議

Everspin Technologies Inc新聞

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每股收益

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營業總收入

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Everspin Technologies Inc簡介

Everspin Technologies, Inc. is a developer and manufacturer of magnetoresistive random access memory (MRAM) solutions. Its MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM offers products with industry-standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.
公司代碼MRAM
公司Everspin Technologies Inc
CEOAggarwal (Sanjeev)
網址https://www.everspin.com/
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