Everspin Technologies, Inc. is engaged in providing magneto resistive random-access memory (MRAM) solutions. The Company's MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM products include industry standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI (QSPI) interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.
Símbolo de cotizaciónMRAM
Nombre de la empresaEverspin Technologies Inc
Fecha de salida a bolsaOct 07, 2016
Director ejecutivoDr. Sanjeev Aggarwal, Ph.D.
Número de empleados86
Tipo de seguridadOrdinary Share
Fin del año fiscalOct 07
Dirección5670 W. Chandler Boulevard
CiudadCHANDLER
Bolsa de valoresNASDAQ Global Market Consolidated
PaísUnited States of America
Código postal85226
Teléfono14803471111
Sitio Webhttps://www.everspin.com/
Símbolo de cotizaciónMRAM
Fecha de salida a bolsaOct 07, 2016
Director ejecutivoDr. Sanjeev Aggarwal, Ph.D.
Un total de
0.00
USD se ha distribuido en dividendos durante los últimos 5 años.

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