Everspin Technologies, Inc. is engaged in providing magneto resistive random-access memory (MRAM) solutions. The Company's MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM products include industry standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI (QSPI) interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.
BörsenkürzelMRAM
Name des UnternehmensEverspin Technologies Inc
IPO-datumOct 07, 2016
CEODr. Sanjeev Aggarwal, Ph.D.
Anzahl der mitarbeiter86
WertpapierartOrdinary Share
GeschäftsjahresendeOct 07
Addresse5670 W. Chandler Boulevard
StadtCHANDLER
BörseNASDAQ Global Market Consolidated
LandUnited States of America
Postleitzahl85226
Telefon14803471111
Websitehttps://www.everspin.com/
BörsenkürzelMRAM
IPO-datumOct 07, 2016
CEODr. Sanjeev Aggarwal, Ph.D.
In den vergangenen 5 Jahren wurden insgesamt
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USD an Dividenden ausgeschüttet.

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