Everspin Technologies, Inc. is a developer and manufacturer of magnetoresistive random access memory (MRAM) solutions. Its MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM offers products with industry-standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.
์ฑ์ฅ ์ค
ํ์ฌ๋ ์ฑ์ฅ ๋จ๊ณ์ ์์ผ๋ฉฐ, ์ต์ ์ฐ๊ฐ ์์ต์ ๋ฏธํ 55.20M์ ๋ฌํฉ๋๋ค.
์์ค ์ ํ
ํ์ฌ์ ์ค์ ์ด ์ ์๋ก ์ ํ๋์ด, ์ต๊ทผ ์ฐ๊ฐ ์์ค์ ๋ฏธํ ๋ฌ๋ฌ์ ๋ฌํฉ๋๋ค
๊ณผ๋ ํ๊ฐ๋
ํ์ฌ์ ์ต์ PB์ 6.35๋ก, ์ต๊ทผ 3๋
๊ธฐ์ค ๋์ ๋ฐฑ๋ถ์ ๋ฒ์์ ์ํฉ๋๋ค.
๊ธฐ๊ด ๋งค๋
์ต์ ๊ธฐ๊ด ๋ณด์ ์ฃผ์ ์๋ 15.31M์ฃผ์ด๋ฉฐ, ์ ๋ถ๊ธฐ ๋๋น 8.88% ๊ฐ์ํ์ต๋๋ค.
์คํฐ๋ธ ์ฝ์ธ๊ฐ ๋ณด์
์คํ ํฌ์์ ์คํฐ๋ธ ์ฝ์ธ์ด(๊ฐ) ์ด ์ฃผ์ 10.75K์ฃผ๋ฅผ ๋ณด์ ํ๊ณ ์์ต๋๋ค.
์์ฅ ํ๋ ๊ฐ์
ํ์ฌ๋ ํฌ์์๋ค์ ๊ด์ฌ์ด ์ค์ด๋ค์ด, ์ต๊ทผ 20์ผ๊ฐ ํ์ ์จ์ด 2.43์
๋๋ค.