Everspin Technologies Inc의 펀더멘털은 비교적 아주 건전한 상태이며, 성장 잠재력은 높습니다.기업의 밸류에이션은 적정하게 평가된 것으로 간주되며, 반도체 및 반도체 장비 산업에서 105개 중 66위 랭킹.기관 보유 비율은 매우 높은.지난 한 달 동안 여러 애널리스트가 해당 기업을 매수(으)로 평가했으며, 최고 목표 가격은 18.00입니다.중기적으로 주가는 상승 추세일 것으로 예상됩니다.지난 한 달간 주식 시장에서 매우 부진한 성과를 거두었지만, 기업의 펀더멘털과 기술적 지표는 탄탄합니다.주가는 지지선과 저항선 사이에서 횡보하고 있으며, 범위 매매 기반의 스윙 트레이딩에 적합한 상황입니다.
Everspin Technologies Inc 점수
관련 정보
산업 순위
66 / 105
전체 순위
262 / 4565
산업
반도체 및 반도체 장비
저항선 & 지지선
기업이 아직 관련 데이터를 공개하지 않았습니다.
레이더 차트
현재 가격
과거
미디어 보도
최근 24 시간
보도 수준
매우 낮은
매우 높은
중립
Everspin Technologies Inc 주요 내용
강점위험 요소
Everspin Technologies, Inc. is a developer and manufacturer of magnetoresistive random access memory (MRAM) solutions. Its MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM offers products with industry-standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.
Everspin Technologies, Inc. is a developer and manufacturer of magnetoresistive random access memory (MRAM) solutions. Its MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM offers products with industry-standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.