Everspin Technologies, Inc. is engaged in providing magneto resistive random-access memory (MRAM) solutions. The Company's MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM products include industry standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI (QSPI) interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.
Ticker SymbolMRAM
Company nameEverspin Technologies Inc
IPO dateOct 07, 2016
CEODr. Sanjeev Aggarwal, Ph.D.
Number of employees86
Security typeOrdinary Share
Fiscal year-endOct 07
Address5670 W. Chandler Boulevard
CityCHANDLER
Stock exchangeNASDAQ Global Market Consolidated
CountryUnited States of America
Postal code85226
Phone14803471111
Websitehttps://www.everspin.com/
Ticker SymbolMRAM
IPO dateOct 07, 2016
CEODr. Sanjeev Aggarwal, Ph.D.
A total of
0.00
USD has been distributed in dividends over the past 5 years.

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