USD0.000åå ŽååŒÂ  (ET)
323.76MæäŸ¡ç·é¡
1021.75çŽè¿12ã¶æPER
Everspin Technologies Inc
äž»èŠããŒã¿
14.400å§å€
14.400é«å€
810.65Kåºæ¥é«
1021.75çŽè¿12ã¶æPER
28.99äºæ³PER
--çŽè¿12ã¶æé
åœ
3.53%売買å転ç
14.950忥çµå€
13.260å®å€
7.38M売買代é
414.54æ ªäŸ¡åçç
4.70PBRïŒæ ªäŸ¡çŽè³ç£åçïŒ
0.00%çŽè¿12ã¶æé
åœå©åã
0.35%ç·è³ç£å©çç
51.50052é±é«å€
0.73åºæ¥é«æ¯ç%
781.00KçŽå©ç
22.98Mæ ªåŒæ°
0.01381æ ªåœããå©çïŒEPSïŒ
1.93ããŒã¿å€
0.43%èªå·±è³æ¬å©çç
5.50052é±å®å€
7.63%æ¯ãå¹
52.74%ç²å©çç
323.76MæäŸ¡ç·é¡
-5.64ãªã¹ã¯ãªã¿ãŒã³
5.54%ãªã¹ã¯ç
é貚: USD æŽæ°æå»: 2026-07-27 äž»èŠã€ã³ãµã€ã
Everspin Technologies Incã®ãã¡ã³ãã¡ã³ã¿ã«ãºã¯æ¯èŒçéåžžã«å¥å
šã§ããæé·ã®å¯èœæ§ã¯é«ãã§ããããªã¥ãšãŒã·ã§ã³ã¯é©æ£äŸ¡æ Œãšè©äŸ¡ãããŠããŸããåå°äœ & åå°äœè£œé è£
眮æ¥çã§ã®é äœã¯105äž52äœã§ããæ©é¢æè³å®¶ä¿æçã¯éåžžã«é«ãã§ããéå»1ãæéã«è€æ°ã®ã¢ããªã¹ããè²·ããšè©äŸ¡ããæé«ç®æšæ ªäŸ¡ã¯24.67ãšãããŠããŸããäžæçã«ã¯ãæ ªäŸ¡ã¯äžæãã¬ã³ããšäºæ³ãããŸããæ ªåŒåžå Žã§ã®ããã©ãŒãã³ã¹ã¯ãã®1ãæã§éåžžã«äœèª¿ã§ããããå瀟ã®ãã¡ã³ãã¡ã³ã¿ã«ãºã¯å
調ã§ããæ ªäŸ¡ã¯æ¯æç·ã𿵿ç·ã®éã§æšªã°ãæšç§»ããŠãããã¬ã³ãžçžå Žã§ã®ã¹ã€ã³ã°ãã¬ãŒãã«é©ããŠããŸãã
Everspin Technologies Incã®ã¹ã³ã¢î°î°
ãµããŒãã©ã€ã³ãšã¬ãžã¹ã¿ã³ã¹ã©ã€ã³

äŒç€Ÿããé¢é£ããŒã¿ããŸã é瀺ãããŠããŸããã
éåžžã«äœã
éåžžã«é«ã
Everspin Technologies Incã®æ³šç®ãã€ã³ã
匷ã¿ãªã¹ã¯
Everspin Technologies Inc ãã¥ãŒã¹
ææ°æ
å ±ããåŸ
ã¡ãã ãã...
åçäºæž¬î
匷åè²·ã
è²·ã
äžç«
売ã
匷å売ã
Everspin Technologies Inc
MRAM
3
Advanced Micro Devices Inc
AMD
54
ææšî
ææš
売ã(3)
äžç«(4)
è²·ã(0)
ç§»åå¹³å
売ã(6)
äžç«(0)
è²·ã(0)
è²¡åææšî
EPS

äŒç€Ÿããé¢é£ããŒã¿ããŸã é瀺ãããŠããŸããã
ç·å£²äžé«

äŒç€Ÿããé¢é£ããŒã¿ããŸã é瀺ãããŠããŸããã
Everspin Technologies Incã®äŒæ¥æ
å ±î
Everspin Technologies, Inc. is a developer and manufacturer of magnetoresistive random access memory (MRAM) solutions. Its MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM offers products with industry-standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.
äŒæ¥ã³ãŒãMRAM
äŒæ¥åEverspin Technologies Inc
æé«çµå¶è²¬ä»»è
ãCEOãAggarwal (Sanjeev)
ãŠã§ããµã€ãhttps://www.everspin.com/
æ ªäž»çµ±èšî
ãããã質å
Everspin Technologies IncïŒMRAMïŒã®çŸåšã®æ ªäŸ¡ã¯ãããã§ããïŒ
îEverspin Technologies IncïŒMRAMïŒã®çŸåšã®æ ªäŸ¡ã¯14.95ã§ãã
Everspin Technologies Incã®ãã£ãã«ãŒã·ã³ãã«ã¯äœã§ããïŒ
îEverspin Technologies Incã®ãã£ãã«ãŒã·ã³ãã«ã¯MRAMã§ãã
Everspin Technologies Incã®52é±é«å€ã¯ãããã§ããïŒ
îEverspin Technologies Incã®52é±é«å€ã¯51.50ã§ãã
Everspin Technologies Incã®52é±å®å€ã¯ãããã§ããïŒ
îEverspin Technologies Incã®52é±å®å€ã¯5.50ã§ãã
Everspin Technologies Incã®æäŸ¡ç·é¡ã¯ãããã§ããïŒ
îEverspin Technologies Incã®æäŸ¡ç·é¡ã¯343.52Mã§ãã
Everspin Technologies Inc (MRAM) ã®çŸåšã®è©äŸ¡ã¯ãè²·ããããããŒã«ãããã売ããã®ã©ãã§ããïŒ
îã¢ããªã¹ãã«ãããšãEverspin Technologies IncïŒMRAMïŒã®ç·åè©äŸ¡ã¯è²·ãã§ãç®æšæ ªäŸ¡ã¯24.67ã§ãã
Everspin Technologies Inc (MRAM) ã®1æ ªåœããå©çïŒEPS TTMïŒã¯ãããã§ããïŒ
îEverspin Technologies IncïŒMRAMïŒã®1æ ªåœããå©çïŒEPS TTMïŒã¯-0.03ã§ãã